Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applications

ABSTRACT

A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal oxide is deposited over the charge trapping layer to form a thick oxide on top of the core source/drain region and a pinch off and a void at the top of the STI trench. An etch is performed on the pinch-off oxide and the thin oxide on the trapping layer on the STI oxide. The trapping layer is then partially etched between the core cells. A dip-off of the oxide on the trapping layer is performed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide and thus isolate the trap layer.

FIELD OF THE INVENTION

The present invention relates, in general, to a self-aligned process forfabricating semiconductor memory devices by using a non-conformal filmand etch back process.

BACKGROUND OF THE INVENTION

Data is digitally stored in semiconductor memory devices. Thesesemiconductor memory devices fall into one of two categories. Volatilememory devices retain their data only when they are powered on; whereas,non-volatile memory chips can retain the data even if no external poweris being supplied to the memory device. One popular form of non-volatilememory device is flash memory. Flash memory is versatile because it canbe erased and programmed multiple times. Furthermore, flash memory isrelatively inexpensive compared to other types of non-volatile memorydevices. Consequently, flash memory is ideal for applications thatdemand significant amounts of non-volatile, solid-state storage.Examples of applications employing flash memory include USB flashdrives, digital audio players, digital cameras and camcorders, mobilephones, automotive control systems, gaming consoles, etc.

Flash memory is typically made up of an array of floating gatetransistors, commonly referred to as memory “cells.” One or more bits ofdata are stored as charge by each memory cell. For example, dual bitmemory devices use a silicon-oxide-nitride-oxide-silicon (SONOS) typearchitecture in which a lower layer of silicon oxide is formed over asemiconductor substrate that is typically silicon. A layer of siliconnitride is formed on the lower layer of silicon oxide, an upper layer ofsilicon oxide is formed on the layer of silicon nitride and a layer ofan electrically conductive material is formed on the upper layer ofsilicon oxide. The combination of the lower silicon oxide layer, thesilicon nitride layer, and the upper silicon oxide layer are capable oftrapping charge and are commonly referred to as a charge trappingdielectric structure or layer. It should be noted that the chargetrapping structure is defined as a stack of ONO. When more than one bitof information is stored in the charge trapping structure, the memorydevice is referred to as a dual bit memory device. Bit lines aretypically formed in the portion of the semiconductor substrate that isbelow the charge trapping structure and word lines may be formed fromthe layer of electrically conductive material that is disposed on thecharge trapping structure. This arrangement enables flash memory cellsto be manufactured efficiently and economically.

Various semiconductor fabrication processes use masks to help align thememory cells. Aligning the cells produces a more organized and compactdesign. Although masking techniques properly align the cells, scalingbecomes an issue. It becomes harder to place the cells closer together.It is important to place the cells as close together without impactingtheir functionality because denser cells can hold more data for a givensemiconductor area. In other words, tighter tolerances allow for greatermemory capacity at reduced cost.

A self-aligned process has been developed to help alleviate the scalingissues associated with the use of masks. The self-aligned processeliminates the need to use masks for alignment purposes. FIG. 1 shows across-sectional view of an exemplary self-aligned memory device. It canbe seen that each active region 101-103 is separated on each side by STItrenches 104-107. The trenches are formed through a shallow trenchisolation (STI) process. Any number or combination of layers can bedeposited or grown over the active regions 101-103. For example, atunnel oxide layer (optional), ONO (ONO stands for tunneloxide-nitride-top oxide) stacks 108-110, polysilicon layer(s) 111, etc.can be formed over the active regions 101-103. Notice that the wingsformed as part of the ONO stacks 108-110 bend upwards and extendoutwards to the STI trenches 104-107. This limits how closely the memorycells can be placed together. In other words, this limits thescalability of memory devices using such a self-aligned fabricationprocess.

SUMMARY OF THE INVENTION

A method for fabricating a memory device with a self-aligned trap layerwhich is optimized for scaling is disclosed. In the present invention, anon-conformal oxide is deposited over the charge trapping layer to forma thick oxide on top of the core source/drain region. The upper portionof the non-conformal oxide has a very narrow gap or can touch and form apinch-off over the STI trench. The non-conformal oxide widens and formsa void towards its lower portions. A dry or wet etch or a combination ofdry and wet etch is performed on the non-conformal oxide and the thinoxide on the trapping layer on the STI oxide. The nitride trapping layeris then partially etched between the core cells. A dip-off of the oxideon the trapping layer is performed. And a top oxide is formed whichconsumes any remaining nitride trap layer between the core cells toisolate them. Consequently, a trapping structure over an active regionis separated from adjacent trapping structures at its bottom-mostextended edges.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be better understood from a reading of thefollowing detailed description, taken in conjunction with theaccompanying drawing figures in which like reference charactersdesignate like elements and in which:

FIG. 1 shows a cross-sectional view of an exemplary self-aligned memoryhaving upwardly extending trapping layers.

FIG. 2 shows the steps for the initial process flow for fabricating thememory device according to one embodiment of the present invention.

FIG. 3A shows a cross-sectional view of a memory device as it existsupon completing the CMP of the STI.

FIG. 3B shows a cross-sectional view of a memory device as it existsupon performing the first STI oxide recess.

FIG. 3C shows a cross-sectional view of a memory device as it existsupon performing the second STI oxide recess.

FIG. 4 is a flowchart describing the process flow for isolating thetrapping layer between core cells for improved scalability.

FIG. 5A is a cross-sectional view of the memory device with anon-conformal oxide having a pinch-off region.

FIG. 5B is a cross-sectional view of the memory device with anon-conformal oxide having a narrow channel region.

FIG. 6 is a cross-sectional view of the memory device as it exists fromdry etch of the pinch-off to partially etch the nitride trap layer.

FIG. 7 is a flowchart describing the steps for the process associatedwith a periphery integration scheme.

FIG. 8 shows a cross-sectional view of a formalized memory deviceaccording to one embodiment of the present invention.

FIG. 9 shows a system according to embodiments of the present invention.

DETAILED DESCRIPTION

The following embodiments are described in sufficient detail to enablethose skilled in the art to make and use the invention, and it is to beunderstood that other embodiments would be evident based on the presentdisclosure and that process or mechanical changes may be made withoutdeparting from the scope of the present invention. In the followingdescription, numerous specific details are given to provide a thoroughunderstanding of the invention. However, it will be apparent that theinvention may be practiced without these specific details. In order toavoid obscuring the present invention, some well-known systemconfigurations and process steps are not disclosed in detail. Likewise,the drawings showing embodiments of the invention are semi-diagrammaticand not drawn to scale, and particularly, some of the dimensions are forthe clarity of presentation and are shown exaggerated in the Figures.

Generally, the present invention provides a method for manufacturing aself-aligned memory device with superior scalability. Semiconductornon-volatile memory devices, such as NOR-type and NAND-type flashmemories, can be constructed using oxide/nitride/oxide (ONO)configurations. The nitride layer (e.g., silicon nitride, silicon richnitride, or multiple layers with different percentages of Si content)closest to the semiconductor substrate in an ONO configuration acts asthe charge storing layer and is typically programmed and erased by thetunneling of electrons into and out of this layer. FIG. 2 shows thesteps for the initial process flow for fabricating the memory deviceaccording to one embodiment of the present invention. In step 201, a padoxide layer is formed on a silicon substrate. The pad oxide can be grownor deposited over the substrate. A nitride layer for the source/drain(SD) is then deposited. In step 202, a source/drain (SD) mask ispatterned, and the core STI etch is performed accordingly. And in step203, one or more liner oxide layers are formed. It is the combination ofone or more liner oxide and/or cleaning processes which causes thecorners of the STI to become rounded. It should be noted that otherknown processes for rounding the corners can be employed at this time.In step 204 an STI oxide fill is performed. The filling can be aninsulator material, such as an oxide formed by a high density plasmaprocess. This trench fill material is polished back in step 205 througha chemical mechanical planarization (CMP) technique. Other suitableplanarization techniques include electropolishing, electrochemicalpolishing, chemical polishing, and chemically enhanced planarization. Afirst STI oxide recess is performed in step 206. The nitride is thenstripped in step 207. A second STI oxide recess is performed in step208. In step 209, a bottom oxide is formed. And in step 210, the nitridetrapping layer is deposited.

FIG. 3A shows a cross-sectional view of a memory device as it existsaccording to the process flow of steps 201-205 described in FIG. 2above. It can be seen that nitrides 301-303 are over active regions304-306. The CMP process polishes the top level back to the tops of thenitrides 307.

FIG. 3B shows a cross-sectional view of a memory device as it existsupon performing the first STI oxide recess of step 206. The oxide isrecessed back to the bottom level 307 of the nitrides 301-303.

FIG. 3C shows a cross-sectional view of a memory device as it existsupon performing the second STI oxide recess of step 208. It can be seenthat this produces a bowl-shaped depression in the oxide filled STItrenches 308 and 309.

FIG. 4 is a flowchart describing the process flow for isolating thetrapping layer between core cells for improved scalability. In step 401,a thin conformal sacrificial top oxide is formed through a TEOS process.It should be noted that TEOS is one of the films that can be used forthe conformal sacrificial top oxide; other films can be used as well.The high temperature anneal step makes the wet etch rate of thesacrificial oxide slower than the subsequent non-conformal film. Anon-conformal oxide is deposited to form a thick oxide on top of thecore SD in step 402. This non-conformal oxide can have a narrow channelor can have a pinch-off at the top of the gap in the STI trench. Next,in step 403, a dry or wet etch widens the narrow channel or opens up thepinch-off oxide, and a dry etch of thin oxide on the trapping layer onSTI oxide is performed. The SD has a thick residual oxide. The trappinglayer between the core cells can now be partially etched in step 404 forisolation. The etching can be either dry or wet or a combination of dryand wet etch. In step 405, a dip-off of the sacrificial oxide on thetrapping layer is performed.

FIG. 5A is a cross-sectional view of the memory device with thenon-conformal oxide having a pinch-off region. The charge trapping layer504 is shown over active regions 501-502 and STI trench 503. In oneembodiment, the charge trapping layer entails growing a bottom oxidelayer. A silicon-rich nitride (SiRN) or multiple layers of nitride withdifferent percentages of Si content are deposited on top of the bottomoxide layer. It should be noted that any charge trapping structure,including but not limited to ONO, can be utilized within the scope ofthe present invention. Other charge trapping structures can includethree or more dielectric layers disposed on the active regions. Forexample, the top and bottom dielectric layers may be silicon dioxidelayers that are oxygen-rich silicon dioxide layers; one or both of whichmay be thermally grown or deposited oxide layers. Alternatively, one orboth of the bottom and top dielectric layers may be silicon dioxidelayers that are nitrided oxide layers. The middle dielectric layer maybe a silicon-rich silicon nitride layer or a combination of multiplelayers with different percentages of Si content. It should be understoodthat the charge trapping structure is not limited to being a three layerstructure or a structure limited to silicon dioxide and silicon nitride.The charge trapping structure may be any dielectric layer or layerscapable of trapping charge or that facilitate charge trapping. Othersuitable materials include an oxide/nitride bilayer dielectric, anitride/oxide bilayer dielectric, an oxide/tantalum oxide bilayerdielectric (SiO₂/Ta₂O₅), an oxide/tantalum oxide/oxide trilayerdielectric (SiO₂/Ta₂O₅/SiO₂), an oxide/strontium titanate bilayerdielectric (SiO₂/SrTiO₃), an oxide/barium strontium titanate bilayerdielectric (SiO₂/BaSrTiO₂), an oxide/strontium titanate/oxide trilayerdielectric, an oxide/strontium titanate/oxide trilayer dielectric(SiO₂/SrTiO₃/BaSrTiO₂), and oxide/hafnium oxide/oxide trilayerdielectric, and the like. A tunnel oxide may be formed between thesemiconductor substrate and charge trapping structure.

The non-conformal oxide is depicted as layers 505 and 506. Because theoxide is deposited by means of a non-conformal process, it is thicker insome places and thinner in other places. It is this uneven depositionwhich results in a void 507. In one embodiment, the tops of thenon-conformal oxides meet and touch, forming a pinch-off region shown as511. As shown, in this embodiment, the sidewalls of the non-conformaloxide are not perfectly vertical. The sidewalls have a slight slope. Thesidewall 513 of non-conformal oxide layer 505 has a slight positiveslope, and the sidewall 514 of the adjacent non-conformal oxide layer506 has a negative slope. The sloping sidewalls are due to thenon-conformal layers having a base which is narrower than their tops.The slightly sloping sidewalls define the void region 507. For a 22 nmfabrication process, the distance 508 from the peak to the trough of thetrapping layer 504 is approximately 20-100 nanometers. The width 509 ofthe troughs of the trapping layer 504 is approximately 5-50 nanometers.The width 510 of the STI trench measured at the level of the troughs ofthe trapping layer is approximately 10-30 nanometers.

FIG. 5B is a cross-sectional view of the memory device with thenon-conformal oxide having a narrow channel region. This figure isbasically the same as that of FIG. 5A with the exception that the topsof the non-conformal oxides do not touch. There is a narrow gap orchannel between the two non-conformal oxides 505 and 506. This narrowchannel is depicted by region 512. Again, the sidewalls 515 and 516 ofthe non-conformal regions 505 and 506 are slightly sloped. Void 507 isbounded on the bottom by the charge trapping layer 504; on either sideby sidewalls 515 and 516; and open on the top by channel region 512.

FIG. 6 is a cross-sectional view of the memory device as it existsaccording to the process flow described above after performing steps403-405 of FIG. 4. The wet etch of the non-conformal oxide causes aseparation 606 to be formed between the two oxide areas 604 and 605. Inthe case of a pinch-off situation, the two non-conformal oxides areseparated. In the case of a narrow channel situation, the channel iswidened. This separation exposes the void (507 of FIG. 5). A wet or dryetch of oxide on top of the trapping layer between 604 and 605 isperformed. The trapping layer is partially etched off by a wet or dryetch. The partially etched portion of the trapping layer is depicted asslot 607.

FIG. 7 is a flowchart describing the steps for the process associatedwith a periphery integration scheme. Upon forming the self-aligned ONOstacks, an ONO masking step 701 is performed. The ONO in the peripheryarea is then etched in step 702. A periphery thick gate oxide layer isfabricated in step 703. A low temperature plasma or furnace top oxide isfabricated in step 704. This top oxide also converts the remainingnitride trapping layer to oxide and thus separates the trapping layerfor each active region. The gate oxide is then masked in step 705. Thegate oxide is then etched in step 706. And a periphery thin gate oxideis fabricated in step 707. A polysilicon layer is deposited and the wordline definition is performed in step 708. In step 709, wet and dry etchof the top oxide and trap layer between word lines is performed.Thereafter, the process steps follow well-known, conventionalfabrication techniques.

FIG. 8 shows a cross-sectional view of a formalized memory deviceaccording to one embodiment of the present invention. Note that thesubsequent top oxide oxidizes the remaining nitride trap layer in 607,converting the remaining nitride trap layer to oxide, and thus separatesthe trapping layer between the two active regions. The result is thatthe trapping layers are segmented from each other. For example, there isa trapping layer 801 above active region 802 and a separate trappinglayer 803 above active region 804. Each active region has its own chargetrapping layer. In particular, a trapping structure 801 has edges 805and 806 which extend on either side of the active region 802. Theseedges 805 and 806 exist at the bottom regions of the trapping structure801. In other words, the trapping structures are separated from adjacenttrapping structures at their bottom-most regions. The combination of thethin conformal sacrificial top oxide (optional), non-conformal oxidedeposition, dry or wet or a combination of wet and dry etch ofnon-conformal oxide and thin oxide on trapping layer on STI oxide whileresidual oxide remains on SD, and etching the trapping layer betweencore cells for isolation makes this new fabrication process self-alignedaccording to this embodiment of the present invention. For a 22 nmfabrication process, the separation between the trapping layers isapproximately 10 nanometers wide. In contrast to the upwardly extendingwings of the charge trapping layer associated with some self-alignedprocesses, the present invention produces folded-down wings with minimalextensions on the sides. This new configuration is superior for purposesof scaling. In other words, the core cells can be placed closertogether. Furthermore, the wider channel width enables the drain voltageto be reduced which mitigates the short channel effect for the samedrive current.

FIG. 9 shows a system according to embodiments of the present invention.The system 900 can be a portable multimedia device, media player,communications device, networking devices, computing device, consumerelectronic device, mobile computing device, image capture device,audio/visual device, gaming console, etc. System 900 includes a process902 that pertains to a microprocessor or controller for controlling theoverall processing of data in system 900. Digital data is stored in afile system 904 and a cache memory 906. The file system 904 typicallyprovides high capacity storage capability for system 900. File system904 can include a non-volatile flash memory 930. Flash memory 930 hasrounded STI corners and is manufactured as described above. The system900 also includes volatile random access memory (RAM) 920 andnon-volatile read-only memory (ROM) 922 for storing digital data. System900 also includes a user input device 908, such as a button, keypad,dial, scroll wheel, touch sensitive pad, etc. A display 910 is used todisplay visual information to the user. A data bus 924 transfers databetween the various components via a bus interface 918. Acompression-decompression (CODEC) chip can be used to facilitate datastorage and transfers. A speaker 914 is used to play back songs, voicemessages, and other audio streams.

Therefore, a non-volatile, self-aligned semiconductor memory deviceoptimized for scaling has been disclosed. In one embodiment, the STIprocess is performed before the ONO and polysilicon deposition steps.This enables the STI corners to be rounded after the STI process butbefore the ONO and polysilicon deposition steps. Moreover, the presentinvention is self-aligned. This is accomplished by means of a thinconformal sacrificial top oxide (optional), non-conformal oxidedeposition, dry or wet etch of the non-conformal oxide, partiallyetching the trapping layer between the core cells and oxidizing theremaining trapping layer in top oxide for isolation. Scaling has beenoptimized by etching the trapping layer at the troughs rather than atthe peaks. Although not shown, it should be appreciated that source anddrain regions are formed in active regions of the substrate and thatadditional processing is performed to form a metallization systemincluding contact structures.

Although certain preferred embodiments and methods have been disclosedherein, it will be apparent from the foregoing disclosure to thoseskilled in the art that variations and modifications of such embodimentsand methods may be made without departing from the spirit and scope ofthe invention. It is intended that the invention shall be limited onlyto the extent required by the appended claims and the rules andprinciples of applicable law.

1-22. (canceled)
 23. A method for manufacturing a memory device,comprising: forming a plurality of active regions and a plurality ofisolation regions by shallow trench isolation (STI) operations; forminga plurality of self-aligned charge trapping structures over theplurality of active regions; separating the plurality of charge trappingstructures at their respective bottom portions by a distance that isgreater than the distance separating respective top portions of theplurality of charge trapping structures; forming a first layer ofsemiconductor or conductive material over the plurality of chargetrapping structures, wherein the shallow trench isolation operations areperformed before the plurality of charge trapping structures are formedand subsequently rounding operations are performed on a plurality ofexposed corners of the active region.
 24. The method of claim 23,wherein the plurality of charge trapping structures is self-aligned by:depositing a non-conformal oxide layer over a charge trapping layer,wherein the non-conformal oxide layer forms a pinch-off and void regionover an STI trench; opening up the pinch-off region by etch; andpartially etching to separate the trapping structure layer between aplurality of cells for isolation in a subsequent top oxide step.
 25. Themethod of claim 24 further comprising: forming a thin conformalsacrificial top oxide over the charge trapping layer before depositingthe non-conformal oxide layer; and etching the thin sacrificial topoxide over the STI trench but leaving a thick residual oxide over theactive region.
 26. The method of claim 24 further comprising: forming atop oxide on a portion of the charge trapping layer and converting theremaining portion of the trap layer to oxide to completely separate thetrapping layer for each cell.
 27. The method of claim 23, whereinforming a charge trapping structure comprises: forming a bottom oxidelayer over the active region; forming a nitride layer over the firstoxide layer; and forming a top block oxide layer over the nitride layer.28. The method of claim 27, wherein the nitride layer is comprised ofsilicon rich nitride.
 29. The method of claim 27, wherein the nitridelayer is comprised of nitride on top of silicon rich nitride.
 30. Themethod of claim 27, wherein the nitride layer is comprised of aplurality of layers of nitride, the plurality of layers comprisingdifferent percentages of silicon content.
 31. The method of claim 23further comprising: fabricating a top oxide layer; masking an ONOstructure; etching the ONO structure; fabricating a first periphery gateoxide layer; etching the periphery gate oxide layer; and fabricating asecond periphery gate oxide layer, wherein the second periphery gateoxide layer is thinner than the first periphery gate oxide layer. 32.The method of claim 40 further comprising: depositing polysilicon afterthe second periphery gate oxide layer; defining word lines; and etchingthe top oxide layer and trapping layer between word lines.
 33. A memorydevice, comprising: a semiconductor substrate; a plurality of activeregions comprising a plurality of rounded corners; a plurality oftrenches separating the active regions; and a plurality of self-alignedcharge trapping structures disposed over the plurality of activeregions, wherein the bottoms of the charge trapping structures areseparated by a distance that is greater than the distance separating therespective tops of the charge trapping structures.
 34. The memory deviceof claim 42, wherein the plurality of self-aligned charge trappingstructures are formed by depositing a non-conformal oxide layer over acharge trapping layer, wherein the non-conformal oxide layer forms apinch-off region and a void over an STI trench, etching the pinch-offregion, and etching to separate the trapping structure layer between aplurality of cells.
 35. The memory device of claim 43, wherein a thinconformal sacrificial top oxide is formed over the charge trappinglayer.
 36. The memory device of claim 42, wherein the charge trappingstructures comprise an oxide-nitride-oxide structure.
 37. The memorydevice of claim 45, wherein the nitride of the oxide-nitride-oxidestructure is comprised of silicon rich nitride.